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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Study of self-assembly and degree of ionization of block copolymers using transmission electron microscopy and molecular simulations
 Illés, Peter ; Nová, Lucie (advisor) ; Štěpánek, Miroslav (referee)
Responsive systems, such as block copolymers with solvent-affine blocks, can undergo self-assembly into structures like micelles or vesicles. These assem- blies are highly sensitive to slight changes in external conditions, like pH or temperature, leading to the formation or dissolution of micelles. When one of the polymer blocks is a weak polyelectrolyte, its degree of ionization depends not only on the external conditions but also on the association state. This study focuses on investigating the size and degree of ionization of micellar struc- tures formed by polymer chains containing thermoresponsive and pH-responsive blocks. The investigation combines high-resolution transmission electron mi- croscopy and Hamiltonian Monte Carlo simulations to provide a comprehensive understanding of these micellar structures. 1
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Characterisation of InAs/GaAs quantum dots by high resolution transmission electron microscopy
 Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J.
The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable properties for various applications. The GaAsSb SRL covering InAs QDs is used to improve the structure growth and the final parameters like QD density, QD size or photoluminesence. To obtain high-quality structure with required properties, the structure growth and final structure have to be deeply studied. Since the QDs and SRL system is surrounded by GaAs, the high resolution transmission electron microscopy (HRTEM) measurement was used to reveal the real material arrangement in a prepared sample. In this work we will discuss the results of following HRTEM measurements: flatness and thickness of prepared layers, QD size, atomic arrangement and composition of GaAsSb layer.
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